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Principal InP Laser Development Engineer

$159.78k - $296.74k

Nokia Group

Principal InP Laser Development Engineer United States (Hybrid) Prerequisite experience should include 1 or more areas Design of InP lasers for transmitter PICs Design of InP lasers for high-power applications Your responsibilities Key engineering expertise in all of the following areas is required Design and simulation of optical waveguides, coupling lasers to fibers Simulation of lasers and SOAs with commercial or personally developed software, including carriers and optical fields Design of epitaxial layers required for active devices Process design/fabrication knowledge or process development experience of InP devices or PICs Expertise in testing characterization of InP lasers and SOAs Extensive photonic device data query and analysis in manufacturing environment Experience guiding a team to develop InP lasers for commercial products Location:willing to relocate to Sunnyvale/San Jose, CA Your skills and experience Ph.D. in EE or Physics, 8 to 15yrs industry experience designing and developing InP lasers for high volume applications. NION2026 Job Info Job Category Applied R&D Posting Date 03/12/2026 Degree Level Doctor’s degree (e.g PhD) Job Schedule Full time Job Type Experienced Job Identification 32267 US/Canada Salary Range US Salary range: $159,782.61 -$ 296,739.13 #J-18808-Ljbffr

Vacancy posted 22 hours ago
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