Staff Device Engineer

Description

Company Description

At Power Integrations, we develop innovative semiconductor technologies that power energy-efficient solutions used around the world. From consumer electronics and industrial applications to electric vehicles and renewable energy systems, our products help customers solve increasingly complex power conversion challenges.

Our technologies make electronic devices and energy systems more efficient worldwide. Employees collaborate with talented engineers, business leaders, and operations teams on products that directly affect our customers and our business.
Motivation for Job

Power Integrations is seeking a highly experienced and innovative engineer to lead the development of next-generation high-voltage Gallium Nitride (GaN) power devices. This role offers the opportunity to drive technology innovation from concept through volume manufacturing, contributing directly to industry-leading power conversion solutions for industrial, consumer, renewable energy, and automotive applications. The successful candidate will work at the forefront of wide-bandgap semiconductor technology, collaborating with multidisciplinary teams to improve device performance, reliability, and manufacturability while helping shape future product roadmaps.
Job Description

As a Senior Staff Engineer, GaN Power Devices, you will be responsible for the design, simulation, fabrication, characterisation, and qualification of advanced high-voltage GaN power devices integrated into high-performance and high-reliability products. You will play a key role in driving device innovations from concept through production, ensuring that products meet demanding performance, reliability, and customer requirements.

The position requires deep expertise in semiconductor device physics, particularly wide-bandgap (WBG) technologies, along with hands-on experience in device modelling, layout design, electrical characterisation, and reliability analysis. You will work closely with process integration, product engineering, reliability, operations, and customer-facing teams to enable successful product development and deployment.
Specific Responsibilities

• Design, develop, and qualify high-voltage GaN power devices for commercial, industrial, and automotive applications.
• Perform device and process simulations using TCAD tools to optimise electrical, thermal, and reliability performance.
• Create and maintain detailed device layouts using CADENCE design tools.
• Lead new power device development activities including device conception, fabrication, characterisation, and technical reporting.
• Evaluate and improve device performance through comprehensive electrical, thermal, and reliability testing.
• Analyse failure mechanisms and implement design improvements to enhance product robustness and manufacturability.
• Support volume production qualification activities and drive continuous device performance enhancements.
• Collaborate with cross-functional teams to leverage company technologies and meet customer-specific requirements.
• Provide technical guidance and contribute to strategic technology development initiatives.

Skills Required

• Strong understanding of semiconductor device physics, particularly wide-bandgap (WBG) technologies and GaN devices.
• Expertise in high-voltage GaN power device design and development.
• Proficiency in TCAD simulation tools and CADENCE layout environments.
• Hands-on experience with high-voltage electrical testing and data acquisition systems.
• Strong analytical and problem-solving capabilities.
• Experience evaluating device reliability, thermal performance, and failure mechanisms.
• Excellent communication, collaboration, and technical presentation skills.
• Ability to independently drive projects from concept through production.

Background Desired

• Bachelor's degree in Electrical Engineering with 8+ years of relevant industry experience; or
• Master's degree in Electrical Engineering with 6+ years of relevant industry experience; or
• PhD in Electrical Engineering with 3+ years of relevant industry experience.
• Proven track record of independently designing, qualifying, and bringing high-voltage GaN power devices into volume production.
• Experience working with automotive-grade semiconductor products and qualification standards is highly desirable.
• Prior experience with silicon (Si) power device development is a strong advantage.
• Demonstrated success working within multidisciplinary semiconductor product development teams.
• Experience with power semiconductor fabrication processes and manufacturing environments preferred.

Total Rewards Statement

Power Integrations is committed to building teams that drive innovation and therefore review a range of factors when determining compensation. The annual base pay range for this position is $130,000to $165,000. Our salary ranges are determined by role, level, qualifications, and work location.

The range displayed on the job posting reflects the minimum and maximum target for new hire salaries for this position in California. Within the range, individual pay is determined by additional factors, including job-related skills, experience, and relevant education or training.

Power Integrations also offers to our eligible employees a comprehensive total rewards package that includes equity, medical benefits, ESPP, 401K, tuition reimbursement, and time off programmes. For additional benefits, please visit: