Senior Staff / Staff Engineer - GaN Technologist, Technology Development

DescriptionPower Integrations is seeking a highly experienced Senior Staff /Staff Engineer – GaN Technologist to drive the development of next-generation high-voltage GaN technologies for power conversion applications. This role will focus on advancing lateral GaN HEMT device technology, enabling improvements in performance, manufacturability, reliability, and scalability across a broad range of voltage classes.The successful candidate will serve as a senior technical contributor responsible for defining device concepts, leading technology development activities, supporting productization efforts, and driving innovation in high-voltage GaN platforms. The position requires close collaboration with process integration, product development, reliability, packaging, and manufacturing teams worldwide.ResponsibilitiesLead the development and optimization of high-voltage GaN HEMT technologies for commercial power semiconductor products.Define and execute technology development roadmaps supporting future generations of GaN-based power devices.Drive improvements in key device performance metrics, including specific RDS(on), breakdown voltage, switching performance, robustness, and reliability.Analyze device physics, failure mechanisms, and reliability behavior to identify opportunities for technology advancement.Collaborate with process integration teams to develop and qualify new device architectures and fabrication processes.Support technology transfer from research and development into product development and high-volume manufacturing.Guide silicon validation, characterization, and technology qualification activities.Develop TCAD simulations and analytical models to support device optimization and technology direction.Publish technical findings internally and contribute to patent generation and intellectual property development.Mentor engineers and provide technical leadership across cross-functional development teams.QualificationsRequiredPh.D. or M.S. in Electrical Engineering, Physics, Materials Science, or a related discipline.Minimum of 10 years of experience in semiconductor device development, including significant experience with GaN technologies.Deep understanding of high-voltage GaN HEMT device physics and operation.Demonstrated experience developing, characterizing, and qualifying GaN power semiconductor technologies.Strong background in semiconductor process technology, device characterization, reliability, and failure analysis.Experience interpreting electrical, physical, and reliability data to drive technology improvements.Proven ability to lead technical projects and influence cross-functional teams.Excellent written and verbal communication skills.PreferredExperience with lateral high-voltage GaN technologies (>650V).Experience with TCAD simulation tools and advanced device modeling techniques.Prior experience with HV BCD process development, design rule definitions, and ESD protection is a strong plus.Familiarity with power conversion applications and system-level implications of device technology.Track record of patents, publications, and industry-recognized technical contributions.Experience working with external foundries and technology development partners.Power Integrations is committed to building teams that drive innovation and therefore review a range of factors when determining compensation. The annual base pay range for this position is $140,000 and $210,000. Our salary ranges are determined by role, level, qualifications and work location. The range displayed on the job posting reflects the minimum and maximum target for new hire salaries for this position in California. Within the range, individual pay is determined by additional factors, including job-related skills, experience, and relevant education or training.Power Integrations also offers to our eligible employees a comprehensive total rewards package that includes equity, medical benefits, ESPP, 401K, tuition reimbursement and time off programs. For additional benefits, please visit .