NAND Array Engineer

Compensation: USD 139520 - USD 255000 - yearly Company Description Join a multibillion-dollar global company that brings together amazing technology, people, and operational scale to become a powerhouse in the memory industry. Headquartered in Rancho Cordova, California, Solidigm combines elements of an established, successful technology company with the spirit, agility, and entrepreneurial mindset of a start-up. In addition to the U.S. headquarters and other facilities in the U.S., the company has international presence in Asia, Europe, and the Americas. Solidigm will continue to lead the world in innovating new Memory technologies with aspirations to be the #1 NAND memory company in the world. At Solidigm, we view problems as opportunities to define innovative solutions that hold the power to change the world and unleash the potential technological needs that the future holds. At Solidigm, we are One Team that fosters a diverse, equitable, and inclusive culture that embraces individual uniqueness and empowers us to bring our best selves to deliver excellence in support of Solidigm's vision and mission to be the go-to partner for optimized data storage solutions. You can be part of the takeoff of an innovative business that develops cutting-edge products, delivers strong business value for customers, provides an engaging workplace for its employees, and serves a greater impact on the world. This is a golden opportunity for the right applicant to join us and help design, build, and lead Solidigm. We want a diverse team of dedicated professionals who will not just be Solidigm team members but contribute to how we shape the future of the organization. We are seeking applicants who will grow and thrive in our culture; be customer inspired, trusting, innovative, team-oriented, inclusive, results driven, collaborative, passionate, and flexible. Job Description Solidigm is looking for a highly motivated and technically skilled NAND Array Engineer to join our Performance and Reliability Team. In this role, you will play a critical part in shaping the future of 3D NAND technology by driving characterization of array erase, program, and read operations, and leading trim development for next-generation products. You will work at the intersection of device physics, data analysis, and cross-functional collaboration to deliver industry-leading NAND solutions. Key Responsibilities: Design, plan, and execute NAND memory cell and array characterization experiments to evaluate performance and reliability. Develop and optimize trims to improve Read Window Budget (RWB) and Raw Bit Error Rate (RBER), directly impacting product quality. Apply NAND device physics principles to explain and interpret relationships between experimental data and trim parameters. Collaborate cross-functionally with Device, Design, Reliability, and Product/Test Engineering teams to design and execute bench experiments. Interface with wafer fabrication teams to drive Sort and Wafer-Level Reliability (WLR) Design of Experiments (DOEs). Conduct comprehensive data analysis to identify and communicate trade-offs across multiple parameters of interest. Build predictive models for NAND behavior based on empirically observed data. Develop and maintain scorecards to track NAND device degradation through various physical mechanisms over time. Release optimized trims to the production flow on a regular cadence to ensure continuous product improvement. Drive improvements in back-end test yields through trim optimization and advanced screening techniques. Qualifications Required Qualifications: Master's or PhD in Electrical Engineering, Microelectronics, or a closely related field. 3+ years of industry experience in semiconductor memory technologies and products. Deep understanding of NAND cell and array operations, including array reliability physical mechanisms and characterization techniques. Strong foundation in semiconductor device physics and process flows. Proficiency in statistical analysis methodologies and tools. Hands-on programming experience in C, C++, Python, and/or JMP. Proven ability to thrive in a fast-paced, cross-functional team environment. Strong analytical and problem-solving skills with attention to detail. Excellent communication and presentation skills, with the ability to convey complex technical concepts to diverse audiences. Preferred Qualifications: Experience with 3D NAND architecture and advanced memory scaling challenges. Familiarity with wafer fab processes and Sort/WLR test methodologies. Track record of releasing trims or process improvements to high-volume manufacturing. Experience with machine learning or advanced modeling techniques for semiconductor data. Additional Information This position is also eligible to participate in Solidigm's restricted stock unit (RSU), restricted cash unit (RCU), and cash bonus programs. In addition, Solidigm offers a benefits package that includes medical, dental, vision, supplemental life and AD&D insurance; short- and long-term disability; healthcare and dependent care flexible spending accounts, and a company match on eligible 401(k) plan contributions. The compensation range for this role is $139,520- $255,000. Actual compensation is influenced by a variety of factors including but not limited to skills, experience, qualifications, and geographic location. This is a Hybrid role reporting out of either Rancho Cordova, CA or San Jose, CA. #J-18808-Ljbffr Solidigm Inc.