Principal Diffusion Process Development Engineer, DRAM

Our vision is to transform how the world uses information to enrich life for all .

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

As a Principal Diffusion Process Development Engineer, you will act as a technical leader accountable for FEOL diffusion, annealing, and gate oxidation process advancement for advanced DRAM devices! This position emphasizes gate dielectric scaling, process reliability, and manufacturing preparedness. The ideal candidate blends extensive expertise in diffusion processes, oxidation principles, and device physics with practical experience transitioning technologies from development to production. You will collaborate closely with groups dedicated to process development, device engineering, equipment, and manufacturing to support future technology nodes. This role requires work with AI for productivity.

Key Responsibilities

• Lead the progress of FEOL diffusion, thermal treatment, and gate oxidation operations in advanced DRAM technology.
• Develop and scale ultra-thin gate dielectrics, balancing electrical performance, reliability, variability, and manufacturability.
• Drive process development from concept through integration, pilot qualification, and manufacturing transfer.
• Evaluate, qualify, and optimize diffusion and oxidation equipment platforms and reactor builds.
• Define and monitor manufacturing metrics, including statistical process control, process capability, defectivity, and variability.
• Interpret electrical, physical, and materials characterization data to guide development decisions.
• Partner with external suppliers to develop hardware and processes aligned with future technology needs.
• Act as a technical subject-matter expert, supporting engineers who are developing their skills as needed.

Required Qualifications

• PhD in Chemical Engineering, Materials Science, Chemistry, Physics, Electrical Engineering, or a closely related field with 4+ years of experience
• Strong background in device physics, particularly MOS device behavior.
• Extensive knowledge of diffusion and oxidation principles, including: Thermal processing and reaction kinetics, Dopant behavior and activation, Interface and defect control.
• Demonstrated experience scaling processes to manufacturing readiness, including SPC and process control.
• Excellent written and verbal communication skills.
• Usage of AI/LLM/ML for productivity.

Preferred Experience

• Experience in gate dielectric reduction within advanced DRAM and/or logic technologies.
• Familiarity with FEOL integration challenges, including variability and reliability considerations.
• Experience with characterization techniques such as TEM, SIMS, XPS, AFM, SEM, ellipsometry, and electrical measurements.
• Proven ability to lead technical projects independently and influence cross-functional teams.
• Experience working directly with equipment vendors on tool and process development.

As a world leader in the semiconductor industry, Micron is dedicated to your personal wellbeing and professional growth. Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future. We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget. Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave. Additionally, Micron benefits include a robust paid time-off program and paid holidays. For additional information regarding the Benefit programs available, please see the Benefits Guide posted on micron.com/careers/benefits.

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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