Principal RF Architect

We’re partnered with a well-funded, mission-driven microelectronics organization building next-generation RF and mixed-signal microsystems through advanced 3D heterogeneous integration and chiplet-based architectures. This team operates at the intersection of defense technology and commercial innovation, developing breakthrough platforms for communications, sensing, AI, and high-performance computing. They are seeking a Senior RF Architect to lead the system-level design and development of millimeter-wave microsystems within advanced packaging environments. What You’ll Do Architect RF and mixed-signal microsystems across K-band, Ka-band, and W-band for high-performance communications, radar, and sensing applications Define RF front-end architectures including LNAs, PAs, mixers, phase shifters, and T/R modules optimized for advanced 3D packaging flows Drive RF, thermal, and mechanical co-optimization across heterogeneous multi-die systems Lead EM and circuit co-simulation using tools such as HFSS, ADS, AWR, or CST Oversee RF testing and characterization at wafer, die, and module levels, including calibration, de-embedding, and automation strategies Collaborate with foundry, EDA, and packaging partners to shape next-generation RF integration technologies Develop technical documentation and reference designs to accelerate platform adoption Required Qualifications PhD or MS in Electrical Engineering, Applied Physics, or related RF/microwave discipline 8+ years of hands‑on RF/millimeter‑wave design and validation experience Deep expertise in S-parameters, on‑wafer measurements, and high‑frequency characterization Strong proficiency with RF simulation and EM modeling tools Experience navigating packaging‑level electromagnetic challenges Proven ability to correlate simulation to measured performance Ability to work cross‑functionally in fast‑paced R&D environments Preferred Qualifications Antenna‑in‑Package (AiP), SiP, RFIC, or 3D‑stacked RF module experience Familiarity with advanced heterogeneous integration workflows Exposure to GaN, GaAs, SiGe, or CMOS RF technologies Millimeter‑wave publications or patents Experience with advanced test environments such as wafer‑level, thermal, or cryogenic characterization Why This Opportunity Long‑term funding and strong institutional backing Ownership of full RF system architecture rather than isolated blocks Work on next‑generation high‑frequency microsystems with real‑world impact Exposure to both defense‑grade and commercial‑scale technologies #J-18808-Ljbffr Engtal