SiC Power Device Research Scientist - MVHV Design
US01 Wolfspeed, Inc.
Overview In this position within Wolfspeed’s Power Device Technology Development department, you will be leading device development projects for next-generation silicon carbide (SiC) power devices (MOSFETs, JFETs, JBS diodes and high voltage IGBTs) with an emphasis on High Voltage Bipolar Devices. You will participate in all aspects of silicon carbide power device development, with a focus on device design efforts. You will interact with key customers as well as colleagues from Process Development, Test and Validation, Reliability, and New Product Introduction to master understanding of the full product life cycle of the new technologies. Responsibilities Lead device development efforts in high performance SiC power switching devices Participate in device concept development activities in various SiC device structures, including SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors Explore new device concepts for future High Voltage / Medium Voltage SiC power devices Perform Design of Experiment (DoE) activities for performance optimization of High Voltage SiC power devices Provide optimum device designs with considerations to manufacturability and reliability Hands on characterization of experimental devices Data analysis of experimental data Interact with teams in power electronics applications, fab process development, reliability, and modeling, and deliver device designs with optimal characteristics for target applications Prepare technical presentations and papers for internal meetings, conferences and journals Requirements Ph.D. in Electrical Engineering, Solid State Physics, or closely related area 5 – 10 years of industrial experience in high voltage silicon bipolar power device development preferred Strong understanding in semiconductor device physics Experience in hands‑on characterization of power semiconductor devices Working knowledge of commercial TCAD tools Working knowledge of CAD layout tools Understanding of semiconductor fabrication processes and process integration Understanding of semiconductor device characterization methods Design of experiments and data interpretation skills Ability to work in a team setting Excellent analytical and problem‑solving skills Excellent communication and presentation skills Must be authorized to work in the USA This role may require additional duties and/or assignments as designated by management. Equal Opportunity Employer Wolfspeed is an equal opportunity employer and all qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, or other characteristics protected by law. #J-18808-Ljbffr
- ...US01 Wolfspeed, Inc. in Durham, North Carolina, is seeking a Lead Device Development Engineer in Power Device Technology Development. This role entails leading the development of next-generation SiC power devices and working alongside cross-functional teams. The ideal...Suggested
- ...Overview In this position within Wolfspeed’s Power Device Technology Development department, you... ...for next‑generation silicon carbide (SiC) power devices, including MOSFETs, JFETs,... ...generations of SiC power devices. Perform Design of Experiment (DoE) activities to optimize...SuggestedLocal area
- ...Durham is seeking a Ph.D. qualified engineer with 5-10 years of experience in silicon carbide power device development. The role involves leading projects in high-performance SiC devices, interacting with teams across multiple domains, and optimizing devices for various...Suggested
- ...semiconductor company located in North Carolina is seeking a highly qualified individual to lead device development projects for next-generation silicon carbide (SiC) power devices. The ideal candidate will possess a Ph.D. in Electrical Engineering or Solid State Physics...Suggested
- ...A leading technology company in Durham, NC is seeking a SiC Power Device Research Scientist. This role focuses on leading device development for next-generation silicon carbide power devices. The ideal candidate has a Ph.D. in Electrical Engineering with 5-10 years of...Suggested
- ...In this position within Wolfspeed’s Power Device Technology Development department, you will be leading the modeling efforts of SiC Power Devices, with an emphasis on physics‑... ...additional duties and/or assignments as designated by management. Wolfspeed is an equal opportunity...
- ...holder to lead the development of next-generation silicon carbide power devices. This role requires strong expertise in semiconductor device... ...with characterization. The successful candidate will work on designing, optimizing, and presenting device concepts and results....
- US01 Wolfspeed, Inc. is seeking a talented individual to lead modeling efforts for SiC Power Devices in the Power Device Technology Development department. This role emphasizes predictive and statistical device model development, suitable candidates will have a Ph.D. in...
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