Staff Foundry Technology Reliability Engineer - HBM | Micron Technology | Folsom

Staff Foundry Technology Reliability Engineer – HBM | Micron Technology | Folsom Micron Technology’s Heterogeneous Integration Group (HIG) is leading the development of High Bandwidth Memory (HBM) for AI and ML applications — a breakthrough in semiconductor miniaturization. Leveraging Through Silicon Via (TSV) technology, the team stacks DRAM dies and logic in a single package, achieving unmatched memory density and speed. This role focuses on nano-enabled reliability engineering to push the limits of advanced FinFET and TSV-based architectures . Lead reliability engineering for cutting-edge HBM products at Micron Technology, Folsom. Collaborate across design, foundry, and R&D teams to assess, model, and optimize nanotechnology-enabled process reliability for FinFET nodes and TSV interconnects . Responsibilities: Define, assess, and optimize reliability specifications for advanced FinFET-based base dies and TSV interconnect structures. Perform TMI_Aging simulations for both digital and custom flows, evaluate degradation due to BTI, HCI, SHE, TDDB , and set electromigration limits for TSV chains. Requirements: BS in EE/CS or related + 3+ years relevant experience Foundry PDKs, CMOS design, EDA tools, reliability simulations Micron’s HIG team is pushing the frontiers of heterogeneous integration , delivering high-performance High Bandwidth Memory (HBM) solutions for AI/ML workloads that demand extreme memory bandwidth. This is not just incremental semiconductor work — it’s deep nanotechnology-enabled packaging , using TSV to vertically integrate multiple dies for minimal latency and maximum throughput. What We Offer: Competitive salary + bonus + stock options Salary range: $114,000 – $280,000 USD Micron is an equal opportunities employer and welcomes applications from all qualified candidates. We are committed to a diverse and inclusive workplace. #J-18808-Ljbffr NanoHelp