Wide Bandgap Semiconductor Device and Process Integration Engineer

Wide Bandgap Semiconductor Device and Process Integration Engineer Date: Jul 19, 2026 Location: Lexington, MA, US Company: MIT Lincoln Laboratory The Advanced Materials and Microsystems Group (G81) aims to leverage physical properties at the small scale to develop enabling novel materials, custom microelectronics, and multifunctional microsystems. Our activities range from developing new approaches to materials discovery, pioneering work on specialized microelectronic process technologies, embedding electronic devices in fibers and fabrics, and creating new materials and new processes for additive manufacturing. Our system application space is equally broad, encompassing low-cost picosatellites fabricated in a silicon foundry, additive manufacturing of radiation shields for protecting electronic systems, persistent monitoring of wide areas of ocean using arrays of sensors and hydrophones, and specialized microchips to test and validate cooling solutions for highly integrated high-performance microprocessors. Our high-impact work is enabled by the Microelectronics Laboratory, the Defense Fabric Discovery Center, and other cleanroom facilities at the Laboratory. Job Description The group seeks an engineer/scientist to conduct research and development to advance the state-of-the-art in ultra-wide bandgap semiconductor devices from first-of-a-kind demonstrations to prototypes suitable for technology transfers for applications relating to RF electronics (communications, radar), power electronics (radio frequency, power conversion, sensors, etc.), and other related electronics components for extreme environments. In this role, this individual will serve as a (1) technical subject-matter expert, (2) lead and execute technical projects, (3) contribute to technology roadmaps to establish future generations of the Laboratory's special-purpose device technologies. Duties will require familiarity and leadership in device design, understanding of epitaxial growth processes, fabrication (process development and integration), packaging, test, evaluation and analysis. In addition to technical skills, the candidates should excel in multidisciplinary teamwork, clear and effective communication, independent problem-solving, and meeting program goals and project schedule deadlines. Duties Evaluating and selecting suitable materials, composition and doping profiles, and process steps to achieve desired device specifications, manufacturability, and yield Collaborating closely with process engineers to define and refine process flows, experiment planning, execution, and analysis of results Developing novel device and circuit elements motivated by mission and system requirements Planning and overseeing device packaging and electrical testing (DC, CV, RF, and high voltage, etc.), thermal, and reliability characterization of fabricated devices, analyzing test data to validate models, extracting key device parameters, and identifying areas for optimization Investigating device failures using advanced microscopy and spectroscopy (SEM, TEM, FIB, EDX, etc.), root-cause analysis, and simulation Working with multidisciplinary teams (process engineering, test, characterization, packaging) to define objectives, plan development and integration strategies, manage execution, analyze data, and document experimental progress Supporting external engagement and communication with project sponsors for technology transfer, as needed. Participating in IP development, publications, and external technical collaborations as needed; and briefing diverse internal and external audiences (non-experts, sponsors and senior leadership) Contributing to strategic planning by creating technology roadmaps, and identifying new applications, opportunities, and partners for technology transfers Required Qualifications PhD (or equivalent experience) in Electrical Engineering, Mechanical Engineering, Materials Science and Engineering or similar fields of study. Equivalent experience will be considered. Thorough understanding of ultra-wide band gap semiconductors, (e.g., SiC, GaN, Diamond, etc.) semiconductor device (e.g. MOSFETs, IGBTs, BJTs, HEMTs, etc.) physics, materials growth, fabrication, and characterization for power and / or radio frequency applications Hands-on experience with electronic device packaging, microfabrication process development lithography, metal and dielectric deposition, etching, wafer dicing), process integration, metrology, electrical characterization, and failure analysis. Experience working in a semiconductor, MEMS, or other microfabrication clean room settings Experience with design of experiments, statistical methods and their related tools (e.g., JMP), statistical analysis and data-driven problem solving Experience with device test and characterization (on-wafer automated DC/CV/AC, RF, etc.), data and analysis acquisition, and/or programming (MATLAB, Python, LabView) Demonstrated track record of technical success, impact, and innovation Demonstrated technical team leadership and/or project management Excellent communication skills with the ability to collaborate effectively across disciplines, all levels of the organization and with external partners and sponsors Experience engaging with sponsors and stakeholders to translate application needs into device requirements Ability to work independently and as part of cross-functional teams Preferred Qualifications Familiarity with processes and procedures for process technology transfers Familiarity with power conversion topologies such as buck, boost, and inverter circuits Familiarity with RF test circuit elements such as transmission lines, small signal RF, load-pull Familiarity with the applications pertaining to commercial and defense interests that use ultra-wide band gap semiconductor devices Familiarity with device and process simulation tools (e.g., Synopsys, Silvaco), finite element modelling (COMSOL), and / or compact models generation Recent Graduate Hiring Range: $145,200 - $170,000 Experienced Hiring Range: $145,200 - $220,000 Disclaimer: MIT Lincoln Laboratory provides a typical hiring range as a good faith estimate of what we reasonably expect to offer for this position at the time of posting. The final salary offered to a selected candidate will depend on various factors, including-but not limited to-the scope and responsibilities of the role, the candidate's experience, skills and education/training, internal equity considerations and applicable legal requirements. This range reflects base salary only and does not include additional forms of compensation or benefits. At MIT Lincoln Laboratory, our exceptional career opportunities include many outstanding benefits to help you stay healthy, feel supported, and enjoy a fulfilling work-life balance. Benefits offered to employees include: Comprehensive health, dental, and vision plans MIT-funded pension Matching 401K Paid leave (including vacation, sick, parental, military, etc.) Tuition reimbursement and continuing education programs Mentorship programs A range of work-life balance options ... and much more! Please visit our Benefits page for more information. As an employee of MIT, you can also take advantage of other voluntary benefits, discounts and perks. Selected candidate will be subject to a pre-employment background investigation and must be able to obtain and maintain a Secret level DoD security clearance. MIT Lincoln Laboratory is an Equal Employment Opportunity (EEO) employer. All qualified applicants will receive consideration for employment and will not be discriminated against on the basis of race, color, religion, sex, sexual orientation, gender identity, national origin, age, veteran status, disability status, or genetic information; U.S. citizenship is required. Requisition ID: 42935 Nearest Major Market: Boston Job Segment: RF, Electronics Engineer, Research Scientist, R&D Engineer, Thermal Engineering, Science, Engineering #J-18808-Ljbffr