DRAM Process Integration Intern — Next-Gen Memory
Micron Technology, Inc
Micron Technology, Inc. invites applications for a 3D DRAM Process Integration Engineer Intern. The role focuses on next‑generation DRAM technologies, device performance, reliability, and manufacturability, working in a state‑of‑the‑art 300mm R&D facility with multiple engineering disciplines. The ideal candidate is pursuing a PhD in Materials Science, Physics, or Chemical Engineering with experience in semiconductor fabrication and device physics, and is proficient in data‑driven problem #J-18808-Ljbffr Micron Technology, Inc
Vacancy posted 4 days ago
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