Power Electronics R&D Engineer - IT Power

Job Description

Delta Electronics (Americas) Ltd. has an opening for a power electronics R&D engineer in their IT power team aimed at developing cutting-edge high-power density and high efficiency power converters for datacenter, server, and telecom applications at its Power Electronics Laboratory, located in Research Triangle Park, NC. (

Key Responsibilities

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• Design and develop high power density and high efficiency power conversion solutions for datacenter, server, and telecom applications.
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• Research and implement two-level and multilevel power factor correction topologies, including both hard-switching and soft-switching techniques.
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• Develop and optimize dual-active-bridge (DAB) and resonant DC-DC topologies.
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• Work on single-stage AC-DC topologies, including resonant and DAB configurations.
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• Explore and implement new bidirectional devices like bi-GaN and bi-SiC in various applications such as Vienna rectifiers, Current Source Inverters (CSI), and single-stage isolated AC-DC converters.
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• Design high power density and highly efficient magnetics.
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• Collaborate with cross-functional teams to ensure seamless integration of new technologies into existing and new products.
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• Conduct simulations (PSIM, PLECS, Simplis, ANSYS, Matlab/Simulink) and prototype testing to validate design concepts and ensure performance meets required specifications.
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• Stay up to date with the latest advancements in power electronics.
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• Prepare technical reports, presentations, and documentation to communicate findings and support product development.
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Qualifications

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• M.S. degree with 5 years of relevant experience or Ph.D. degree in Electrical Engineering
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• Proven experience in power electronics design and development, specifically in high efficiency and high-power density designs.
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• Strong knowledge of two-level and multilevel power factor correction topologies (both hard-switching and soft-switching).
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• Expertise in DAB and resonant DC-DC topologies.
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• Experience with single-stage AC-DC topologies (resonant and DAB).
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• Proficiency in working with wide band gap devices such as SiC and GaN.
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• Familiarity with new bidirectional devices (bi-GaN and bi-SiC) and their applications.
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• Experience with hardware design and testing, including PCB layout and thermal management.
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• Hands-on experience with simulation tools such as MATLAB/Simulink, PLECS, or similar.
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• Excellent problem-solving skills and the ability to work independently and as part of a team.
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• Strong communication skills, both written and verbal.
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• Prospective candidates should possess excellent analytical, organizational, interpersonal, and communication skills (fluency in Mandarin is preferred).
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• Preference will be given to U.S. citizens and permanent residents.
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Salary for this role is 140,000 -150,000 along with 20% bonus and signing bonus.