DMTS Design Engineer

Req ID: JR104310 DMTS Design Engineer

Department Overview

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

DRAM Engineering (DRAM Memory) focuses on designing and developing Micron’s industry‑leading dynamic random‑access memory products. The team drives process R&D, product design, and technology development for cutting‑edge DRAM nodes, including DDR5, LPDDR, HBM, and GDDR products that form the foundation of Micron’s global revenue leadership. We work across architecture, engineering, and business teams to evaluate innovative memory solutions and influence product direction.

Responsibilities

• Analyze DDR4, DDR5, LPDDR, and emerging memory technologies across electrical, thermal, power, and performance dimensions.
• Identify performance gaps and evaluate trade‑offs in cost, latency, bandwidth, and efficiency.
• Partner with architecture and product teams to translate analysis into actionable design guidance.
• Drive multi‑functional alignment with firmware, validation, hardware, and business partners.
• Deliver clear technical assessments and recommendations to guide future memory strategy.
• Use Artificial Intelligence tools to build models to find design gaps and summarize all collected data for distribution and analysis.

Minimum Qualifications

• Bachelor’s or Master’s degree or equivalent experience in Electrical Engineering, Computer Engineering, Computer Science, or related field.
• Strong understanding of DDR memory architecture including timing, signaling, and system behavior.
• Experience analyzing memory systems at device and system levels.
• Knowledge of high‑speed I/O, electrical margins, and memory power and thermal characteristics.
• Proven ability to evaluate trade‑offs and communicate data‑driven recommendations.

Preferred Qualifications

• Experience with DDR4/5, LPDDR5/5X/5T, or advanced DRAM technologies.
• Background in memory controller architecture, firmware, or training algorithms.
• Familiarity with DRAM physical layout, packaging, and topology impacts.
• Experience in benchmarking, competitive analysis, or product architecture strategy.
• Exposure to memory modeling, workload analysis, or system‑level simulation.

Relocation Level: TBD

US base salary range: $208,000.00 – $416,000.00 per year. Additional compensation may include benefits, bonuses, and equity.

Benefits include medical, dental, and vision plans, disability insurance, paid family leave, robust paid time‑off, and paid holidays.

Micron is proud to be an equal‑opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.