Assistant Scientist - Microelectronics Device Physics & Nanofabrication

The Nanoscience and Technology Division at Argonne National Laboratory invites applications for an Assistant Scientist (RD2) position in the Nanofabrication and Devices Group within the Center for Nanoscale Materials (CNM). CNM is a U.S. Department of Energy Office of Science user facility that offers world‑class expertise and state‑of‑the‑art instrumentation to enable leading‑edge research in nanoscience and nanotechnology. We seek a highly motivated scientist to help advance CNM’s research leadership in microelectronics, with particular emphasis on device physics, transport measurements, and nanofabrication. Areas of interest include, but are not limited to, the development of energy‑efficient electronic systems through heterointegration for applications in RF electronics, power electronics, and optoelectronics. The successful candidate will build and lead an innovative research program in microelectronics by leveraging CNM’s unique strengths in materials synthesis, device fabrication, and characterization. This position offers the opportunity to pioneer new directions in heterointegration and electrical characterization while contributing to CNM’s mission as a national user facility. The role also includes supporting a broad external user community by providing scientific and technical expertise for experiments and operations in CNM’s cleanroom. Key Responsibilities Develop and lead a strong research program in microelectronics, with a focus on heterojunction device physics and transport measurements. Collaborate with scientists across CNM and Argonne to shape and execute a shared vision for microelectronics research. Manage, maintain, and support key cleanroom instrumentation, including electron beam lithography, plasma FIB, and related nanofabrication tools. Work closely with scientists and engineers from universities, national laboratories, and industry, including providing guidance and technical support to CNM users. Help ensure the reliable operation, and troubleshoot cleanroom tools and electrical probe stations in partnership with CNM operations staff. Position Requirements Ph.D. in Electrical Engineering, Physics, Materials Science or a related field (postdoctoral research experience will be beneficial). A strong background in semiconductor device physics. Significant hands‑on experience fabricating devices based on materials such as 2D materials, ultrawide‑bandgap materials, oxides, or III‑V semiconductors. Demonstrated expertise in micro/nanofabrication and process development in cleanroom environments. Proficiency in device‑level electrical measurements and characterization techniques. Experience in device modeling using COMSOL or TCAD would be beneficial. Ability to model Argonne’s core values of impact, safety, respect, integrity, and teamwork. RD2: Bachelors and 5+ years of experience; Masters and 3+ years; or Ph.D. and 0+ years, or equivalent. Application Requirements Cover letter. Detailed curriculum vitae, including a list of publications. A statement on proposed research (2‑page max) and 1‑page statement regarding an approach to engage and grow the scientific user program. Names and contact information for three professional references. Expected hiring range: $94,486.00 – $147,398.94. (Pay range is a general guideline; the actual offer will depend on qualifications and other factors.) Equal Employment Opportunity As an equal employment opportunity employer, and in accordance with our core values of impact, safety, respect, integrity and teamwork, Argonne National Laboratory is committed to a safe and welcoming workplace that fosters collaborative scientific discovery and innovation. Argonne encourages everyone to apply for employment. Argonne is committed to nondiscrimination and considers all qualified applicants for employment without regard to any characteristic protected by law. #J-18808-Ljbffr Argonne National Laboratory