Staff Device Engineer

Responsibilities

• Design and qualify high - voltage GaN power devices integrated in high performance and high reliability products (including automotive) .

• Perform device/process simulations and device layout for GaN power devices.

• Assignments will include power device creation, fabrication and full characterization , and issuing technical reports .

• Evaluate electrical / thermal performance and reliability of GaN power devices .

• Prior experience in Si power device development is a plus .

• Interact with other departments for best use of Company’s technologies and to support key customer requirements .

Requirements

• B . Sc degree in Electrical Engineering with 8 years’ working experience or

• M . Sc degree in Electrical Engineering with 6 years’ working experience or

• Ph. D degree in Electrical Engineering with 3 years’ working experience

• Proven track record of independently designing and taking into volume production of high-voltage GaN power devices

• Sound understanding of semiconductor device physics , especially WBG

• Proficient in TCAD simulation and CADENCE layout tools

• Hands-on experience with high - voltage testing and data acquisition systems

• Strong communication and collaboration skills